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Advance Technical Information
HiPerFASTTM IGBT with Fast Diode
B2-Class High Speed IGBTs with Ultrafast Diode
IXGH 32N90B2D1 IXGT 32N90B2D1
V I CES VC25 t CE(sat)
fi typ
= 900 V = 64 A = 2.7 V = 150 ns
Symbol
Test Conditions
VCES VCGR
VGES VGEM
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient
IC25 IC110 ICM
SSOA (RBSOA)
TC = 25°C TC = 110°C TC = 25°C, 1 ms
VGE= 15 V, TVJ = 125°C, RG = 10 Ω
Clamped inductive load: VCL < 600V
PC TC = 25°C
TJ TJM Tstg
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Md Weight
Mounting torque (TO-247)
Maximum Ratings
900 V 900 V
±20 V ±30 V
64 A 32 A 200 A
ICM = 64
A
300 -55 ... +150
150 -55 ... +150
300
W °C °C °C °C
TO-247 TO-268
1.13/10 Nm/lb.in.
IXGH32N90B2D1 Datasheet
