Overview: Preliminary Technical Information GenX3TM 1200V IGBT
High speed PT IGBTs for 20 - 50 kHz switching IXGH50N120C3 VCES = IC110 VCE(sat) = ≤ tfi(typ) = 1200V 50A 4.2V 64ns Symbol
VCES VCGR
V GES
VGEM
IC25 IC110 ICM IA EAS
SSOA (RBSOA)
PC
TJ TJM T
stg
Md
TL T
SOLD
Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient
TC = 25°C (limited by leads) TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE= 15V, TJ = 125°C, RG = 3Ω Clamped inductive load @VCE≤ 1200V TC = 25°C
Mounting torque Maximum lead temperature for soldering 1.6mm (0.062 in.) from case for 10s Maximum Ratings
1200 1200 V V ±20 V ±30 V 75 A 50 A 250 A
40 A 750 mJ ICM = 100 A 460
-55 ... +150 150
-55 ... +150
1.13 / 10
300 260
6 W
°C °C °C
Nm/lb.in.
°C °C
g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVCES VGE(th) IC = 250μA, VGE = 0V IC = 250μA, VCE = VGE ICES VCE = VCES VGE = 0V TJ = 125°C I
GES VCE = 0V, VGE = ±20V VCE(sat) IC = 40A, VGE = 15V, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 1200 3.0 V 5.0 V 100 μA 2 mA ±100 nA 4.2 V 2.
