z Optimized for Low Conduction Losses z High Current Capability z International Standard Package z miniBLOC, with Aluminium Nitride
Isolation
Advantages
z High Power Density z Low Gate Drive Requirement.
Full PDF Text Transcription for IXGN400N30A3 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IXGN400N30A3. For precise diagrams, and layout, please refer to the original PDF.
GenX3TM 300V IGBT IXGN400N30A3 Ultra-Low-Vsat PT IGBT for up to 10kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 ILRMS ICM SSOA (RBSOA) PC TJ TJM Tstg VISOL Md Weigh...
View more extracted text
S VGEM IC25 IC110 ILRMS ICM SSOA (RBSOA) PC TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (Chip Capability) TC = 110°C Terminal Current Limit TC = 25°C, 1ms VGE= 15V, TVJ = 125°C, RG = 1Ω Clamped Inductive Load TC = 25°C 50/60Hz t = 1min IISOL ≤ 1mA t = 1s Mounting Torque Terminal Connection Torque (M4) E Maximum Ratings 300 V 300 V ±20 V ±30 V 400 200 200 1200 A A A A ICM = 400 @ 0.8 • VCES 735 A V W -55 ... +150 150 -55 ... +150 °C °C °C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in.
IXGN400N30A3 Datasheet
