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IXGN50N120C3H1 - High-Speed PT IGBT

Key Features

  • z z z z z z V V V V A A A A A Ec G Ec C G = Gate, C = Collector, E = Emitter c either emitter terminal can be used as Main or Kelvin Emitter VGE = 15V, TVJ = 125°C, RG = 2Ω Clamped Inductive Load TC = 25°C Mounting Torque Terminal Connection Torque Optimized for Low Switching Losses Square RBSOA High Current Capability Isolation Voltage 2500V~ Anti-Parallel Ultra Fast Diode International Standard Package Advantages z z High Power Density Low Gate Drive Requirement.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Advance Technical Information GenX3TM 1200V IGBT w/ Diode High-Speed PT IGBT for 20-50 kHz Switching IXGN50N120C3H1 VCES IC110 VCE(sat) = 1200V = 50A ≤£ 4.2V SOT-227B, miniBLOC E153432 Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg VISOL Md Weight 50/60Hz IISOL ≤ 1mA t = 1min t = 1s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC TC TC TC = 25°C = 110°C = 110°C = 25°C, 1ms Maximum Ratings 1200 1200 ±20 ±30 95 50 58 240 ICM = 100 VCE ≤ VCES 460 -55 ... +150 150 -55 ... +150 2500 3000 1.5/13 1.3/11.5 30 W °C °C °C V~ V~ Nm/lb.in. Nm/lb.in.