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IXGQ240N30PB - High Speed IGBT

Key Features

  • Low VCE(sat).
  • - for Minimum On-State Conduction Losses MOS Gate Turn-On - Drive Simplicity.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PolarTM High Speed IGBT For PDP Applications IXGQ240N30PB VCES = 300V = 500A ICP VCE(sat) ≤ 1.6V TO-3P Symbol VCES VGES VGEM IC25 ICP IC(RMS) SSOA (RBSOA) Pd TJ TJM Tstg TL TSOLD Md Weight Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque Test Conditions TJ = 25°C to 150°C Continuous Transient TC = 25°C (Chip Capability) TJ ≤ 150°C, tp < 10μs Lead Current Limit VGE = 15V, TVJ = 125°C, RG = 1Ω Clamped Inductive Load TC = 25°C Maximum Ratings 300 ±20 ±30 240 500 75 ICM = 240 VCE ≤ VCES 500 -55 ... +150 150 -55 ... +150 300 260 1.13/10 5.5 V V V A A A A W °C °C °C °C °C Nm/lb.in.