IXGQ240N30PB Description
+150 300 260 1.13/10 5.5 V V V A A A A W °C °C °C °C °C Nm/lb.in. g G C E G = Gate E = Emitter Tab C = Collector Tab = Collector.
IXGQ240N30PB Key Features
- Low VCE(sat)
- for Minimum On-State Conduction Losses MOS Gate Turn-On
- Drive Simplicity