IXGQ240N30PB
IXGQ240N30PB is High Speed IGBT manufactured by IXYS.
Features
- Low VCE(sat)
- - for Minimum On-State Conduction Losses MOS Gate Turn-On
- Drive Simplicity
Applications
- PDP Screen Drivers
Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250μA, VGE = 0V = 1m A, VCE = VGE TJ = 125°C
Characteristic Values Min. Typ. Max. 300 3.0 5.0 1 200 ±100 1.35 1.40 1.85 2.10 1.60 V V μA μA n A V V V V
VCE = VCES, VGE= 0V VCE = 0V, VGE = ±20V IC IC
= 120A, VGE = 15V, Note 1 TJ = 125°C = 240A TJ = 125°C
© 2007 IXYS CORPORATION, All Rights Reserved
DS99525C(06/07)
Free Datasheet http://.datasheetlist./
Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf td(on) tr td(off) tf Rth JC Rth CS 0.21 Resistive Switching Times, TJ = 25°C IC = 120A, VGE = 15V VCE = 0.8
- VCES, RG = 1Ω Resistive Switching Times, TJ = 125°C IC = 120A, VGE = 15V VCE = 0.8
- VCES, RG = 1Ω IC = 120A, VGE = 15V, VCE = 0.5
- VCES VCE = 25V, VGE = 0V, f = 1MHz IC = 120A, VCE = 10V, Note 1 Characteristic Values Min. Typ. Max. 75 130 6900 435 97 225 37 88 30 70 104 45 29 104 103 100 S p F p F p F n C n C n C ns ns ns ns ns ns ns ns 0.25 °C/W °C/W TO-3P (IXGQ) Outline
Pins:
- Gate 3
- Source
- Drain 4, Tab
- Drain
Note
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2
Free Datasheet http://.datasheetlist./
Fig. 1. Output Characteristics @ T J = 25ºC
240 VGE = 15V 13V 11V 9V 350 300 250 VGE = 15V 13V 11V
Fig. 2. Extended Output Characteristics @ T J = 25ºC
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