IXGQ85N33PCD1 Description
Advance Technical Information PolarTM High Speed IGBT with Anti-Parallel Diode for PDP Sustain Circuit IXGQ85N33PCD1 VCES ICP VCE(sat) = = ≤ 330 V 340 A 2.1 V Symbol V CES Test Conditions TJ = 25°C to 150°C VGEM IC25 ICP IDP IC(RMS) SSOA (RBSOA) TC = 25°C,.
IXGQ85N33PCD1 Key Features
- International standard package
- Fast tfi for minimum turn off
- MOS Gate turn-on
- drive simplicity
- Amperes
- Amperes
- V olts