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IXGQ85N33PCD1 - High Speed IGBT

Key Features

  • International standard package.
  • Fast tfi for minimum turn off switching losses.
  • MOS Gate turn-on - drive simplicity.
  • Positive dVsat/dt for paralleling 260 1.3/10 5.5 Nm/lb. in. g ≤ Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. V GE(th) IC = 1 mA, VCE = VGE 3.0 6.0 V ICES VCE = 330 V VGE = 0 V TJ = 125°C 1 μA 200 μA IGES VCE = 0 V, VGE = ±20 V ±100 nA VCE(sat) VGE = 15V, Note 1 IC = 50 A TJ =.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Advance Technical Information PolarTM High Speed IGBT with Anti-Parallel Diode for PDP Sustain Circuit IXGQ85N33PCD1 VCES ICP VCE(sat) = = ≤ 330 V 340 A 2.1 V Symbol V CES Test Conditions TJ = 25°C to 150°C VGEM IC25 ICP IDP IC(RMS) SSOA (RBSOA) TC = 25°C, IGBT chip capability TJ ≤ 150°C, tp ≤ 1 μs, D ≤ 1% TJ ≤ 150°C, tp < 10 μs Lead current limit VGE = 15 V, TVJ = 150°C, RG = 20 Ω Clamped inductive load, VCE < 300 V PC TC = 25°C TJ TJM T stg Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Plastic body Md Mounting torque Weight Maximum Ratings 330 V TO-3P ±30 V 85 340 40 A GC A E (TAB) G = Gate C = Collector A E = Emitter TAb = Collector 75 A ICM = 96 A 150 -55 ... +150 150 -55 ...