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IXGQ85N33PCD1 - High Speed IGBT

Product Overview

IXYS

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IXGQ85N33PCD1 High Speed IGBT by IXYS - Datasheet Preview — Datasheet preview – IXGQ85N33PCD1

Datasheet Details

Part number	IXGQ85N33PCD1
Manufacturer	IXYS
File Size	139.11 KB
Description	High Speed IGBT
Datasheet	IXGQ85N33PCD1 Datasheet
Additional preview pages of the IXGQ85N33PCD1 datasheet.

Product details

Features

International standard package.
Fast tfi for minimum turn off switching losses.
MOS Gate turn-on - drive simplicity.
Positive dVsat/dt for paralleling 260 1.3/10 5.5 Nm/lb. in. g ≤ Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. V GE(th) IC = 1 mA, VCE = VGE 3.0 6.0 V ICES VCE = 330 V VGE = 0 V TJ = 125°C 1 μA 200 μA IGES VCE = 0 V, VGE = ±20 V ±100 nA VCE(sat) VGE = 15V, Note 1 IC = 50 A TJ =.

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Published: Sep 10, 2015 |