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IXGQ28N120BD1 - High Voltage IGBT

Download the IXGQ28N120BD1 datasheet PDF. This datasheet also covers the IXGQ28N120B variant, as both devices belong to the same high voltage igbt family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z International standard package z IGBT and anti-parallel FRED for resonant power supplies - Induction heating - Rice cookers z MOS Gate turn-on - drive simplicity z Fast Recovery Expitaxial Diode (FRED) - soft recovery with low I RM Symbol VGE(th) ICES IGES VCE(sat) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. IC = 250 µA, VCE = VGE 2.5 5.0 V VCE = VCES VGE = 0 V TJ = 25°C 28N120B 28N120BD1 25 µA 50 µA VCE = 0 V, VGE = ±20 V ±100 nA IC.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXGQ28N120B-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXGQ28N120B High Voltage IGBT
IXGQ240N30PB High Speed IGBT
IXGQ150N33TC IGBT
IXGQ150N33TCD1 IGBT
IXGQ85N33PCD1 High Speed IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
High Voltage IGBT with Diode IXGQ 28N120B IXGQ 28N120BD1 V CES IC25 VCE(sat) tfi(typ) = 1200 V = 50 A = 3.5 V = 160 ns Symbol Test Conditions VCES VCGR V GES VGEM IC25 IC110 ICM SSOA (RBSOA) TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms V GE = 15 V, T J = 125°C, R G = 10 Ω Clamped inductive load PC TC = 25°C TJ TJM Tstg M Mounting torque d Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight D1 Maximum Ratings 1200 1200 V V ±20 V ±30 V 50 A 28 A 150 A I = 60 CM @0.8 VCES 250 A W -55 ... +150 150 -55 ... +150 °C °C °C 1.13/10 Nm/lb.in.