IXGQ28N120BD1 Description
+150 °C °C °C 1.13/10 Nm/lb.in. 300 °C 6g TO-3P (IXGQ) G CE G = Gate E = Emitter (TAB) C = Collector TAB = Collector.
IXGQ28N120BD1 Key Features
- Induction heating
- Rice cookers z MOS Gate turn-on
- drive simplicity z Fast Recovery Expitaxial Diode (FRED)
- soft recovery with low I
- V , CE CES