z Silicon Chip on Direct-Copper Bond (DCB) Substrate - UL Recognized Package - Isolated Mounting Surface - 2500V Electrical Isolation
z Avalanche Rated z Square RBSOA z Anti-Parallel Ultra Fast Diode z Fast Switching z International Standard Package
Advantages
z High Power Density z Low Gate Drive Requirement.
Full PDF Text Transcription for IXGR48N60C3D1 (Reference)
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IXGR48N60C3D1. For precise diagrams, and layout, please refer to the original PDF.
GenX3TM 600V IGBT with Diode IXGR48N60C3D1 (Electrically Isolated Back Surface) High Speed PT IGBTs for 40-100kHz Switching Symbol VCES VCGR VGES VGEM I C25 I C110 ID110 ...
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for 40-100kHz Switching Symbol VCES VCGR VGES VGEM I C25 I C110 ID110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD VISOL F C Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 110°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 125°C, RG = 3Ω Clamped Inductive Load TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 Seconds 50/60 Hz RMS, t = 1min Mounting Force Maximum Ratings 600 V 600 V ±20 V ±30 V 56 A 26 A 27 A 230 A 30 A 300 mJ ICM = 100 A @ VCE ≤ 600 V 125 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 260 °C 2500 V~ 20..120 /
IXGR48N60C3D1 Datasheet
