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GenX3TM 600V IGBT with Diode
IXGR48N60C3D1
(Electrically Isolated Back Surface)
High Speed PT IGBTs for 40-100kHz Switching
Symbol VCES VCGR
VGES VGEM
I
C25
I
C110
ID110 ICM
IA EAS
SSOA (RBSOA)
PC
TJ TJM Tstg
TL TSOLD VISOL F
C
Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 110°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 125°C, RG = 3Ω Clamped Inductive Load TC = 25°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 Seconds 50/60 Hz RMS, t = 1min Mounting Force
Maximum Ratings
600
V
600
V
±20
V
±30
V
56
A
26
A
27
A
230
A
30
A
300
mJ
ICM = 100
A
@ VCE ≤ 600
V
125
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
2500
V~
20..120 / 4.5..27 5
N/lb.
IXGR48N60C3D1 Datasheet
