IXGY2N120 Description
Preliminary Data Sheet High Voltage IGBT IXGY 2N120 VCES 1200 V IC90 2.0 A VCE(SAT) 3V Symbol VCES VCGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; +150 0.8 300 A A A A W °C °C °C g °C TO-252 AA (IXGY) G E G = Gate E = Emitter C (TAB) C = Collector TAB = Collector.
IXGY2N120 Key Features
- International standard package
- Low VCE(sat)
- for low on-state conduction losses
- High current handling capability
- MOS Gate turn-on
- drive simplicity