IXGY2N120 - High Voltage IGBT

Features

International standard package.
Low VCE(sat) - for low on-state conduction losses.
High current handling capability.
MOS Gate turn-on - drive simplicity.

IXGY2N120 High Voltage IGBT by IXYS - Datasheet Preview — Datasheet preview – IXGY2N120

Datasheet Details

Part number	IXGY2N120
Manufacturer	IXYS (now Littelfuse)
File Size	125.72 KB
Description	High Voltage IGBT
Datasheet	IXGY2N120 Datasheet
Additional preview pages of the IXGY2N120 datasheet.

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Full PDF Text Transcription

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Preliminary Data Sheet High Voltage IGBT IXGY 2N120 VCES 1200 V IC90 2.0 A VCE(SAT) 3V Symbol VCES VCGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ VGES VGEM IC25 IC90 ICM SSOA (RBSOA) Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 150Ω Clamped inductive load PC TJ TJM TSTG Weight TC = 25°C Max. Lead Temperature for Soldering (1.6mm from case for 10s) Maximum Ratings 1200 V 1200 V ±20 V ±30 V 5 2 8 ICM = 6 @ 0.8 VCES 25 -55 ... +150 150 -55 ... +150 0.

Published: Oct 27, 2015 |