IXTA1N200P3HV Datasheet | IXYS

High Voltage Power MOSFET IXTA1N200P3HV IXTH1N200P3HV IXTH1N200P3 VDSS I D25 RDS(on) = 2000V = 1.0A  40 N-Channel Enhancement Mode Symbol VDSS VDGR VGSS VGSM ID25 ID110 IDM TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 20 30 TC = 25C TC = 110C TC = 25C, Pulse Width Limited by TJM TC = 25C - 55 ... +150 C C - 55 ... +150 C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s °C °C Mounting Force (TO-263HV) Mounting Torque...