IXTA1N200P3HV - High Voltage Power MOSFET

Features

High Blocking Voltage.
High Voltage Packages Advantages.
Easy to Mount.
Space Savings.
High Power Density.

IXYS

Datasheet Details

Part number	IXTA1N200P3HV
Manufacturer	IXYS
File Size	275.74 KB
Description	High Voltage Power MOSFET
Datasheet	IXTA1N200P3HV Datasheet
Additional preview pages of the IXTA1N200P3HV datasheet.

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Full PDF Text Transcription

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High Voltage Power MOSFET IXTA1N200P3HV IXTH1N200P3HV IXTH1N200P3 VDSS I D25 RDS(on) = 2000V = 1.0A  40 N-Channel Enhancement Mode Symbol VDSS VDGR VGSS VGSM ID25 ID110 IDM PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 2000 V 2000 V 20 V 30 V TC = 25C TC = 110C TC = 25C, Pulse Width Limited by TJM 1.0 A 0.6 A 3.0 A TC = 25C 125 W - 55 ... +150 C 150 C - 55 ... +150 C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 °C 260 °C Mounting Force (TO-263HV) Mounting Torque (TO-247/HV) 10..65 / 22..14.6 1.13/10 N/lb Nm/lb.in TO-263HV TO-247/HV 2.5 g 6.

Published: Mar 22, 2025 |