Datasheet4U Logo Datasheet4U.com

IXTA1N80 - High Voltage MOSFET

Download the IXTA1N80 datasheet PDF. This datasheet also covers the IXTY1N80 variant, as both devices belong to the same high voltage mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s Symbol Test Conditions ! International standard packages ! High voltage, Low RDS (on).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTY1N80_IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXTA1N80 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTA1N80. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated Preliminary Data IXTA 1N80 IXTP 1N80 IXTY 1N80 VDSS ID25 RDS(on) = 800 V = 750 m...

View more extracted text
y Data IXTA 1N80 IXTP 1N80 IXTY 1N80 VDSS ID25 RDS(on) = 800 V = 750 mA = 11 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM Maximum Ratings 800 800 ± 20 ± 30 750 3 1.0 V V V V mA A A mJ mJ V/ns W °C °C °C TO-220AB (IXTP) GD S D (TAB) TO-263 AA (IXTA) TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 47 Ω TC = 25°C 5 100 3 40 -55 ... +150 150 -55 ... +150 G S D (TAB) TO-252 AA (IXTY) G S D (TAB) Mounting torque TO-220 TO-252 TO-263

More Datasheets from IXYS (now Littelfuse)

Part Number Description
IXTA1N80P Power MOSFET
IXTA1N100P Power MOSFET
IXTA1N170DHV N-Channel MOSFET
IXTA1N200P3HV High Voltage Power MOSFET
IXTA100N04T2 Power MOSFET
IXTA100N15X4 Power MOSFET
IXTA102N15T Power MOSFET
IXTA10N60P Power MOSFET
IXTA10P50P Power MOSFET
IXTA110N055T2 Power MOSFET