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IXTA3N100D2 - MOSFET

Key Features

  • Normally ON Mode.
  •  International Standard Packages.
  • Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

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📁 Similar Datasheet

Part Number Description Manufacturer
IXTA3N110 (IXTx3N1x0) High Voltage Power MOSFETs IXYS Corporation
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IXTA3N50D2 N-Channel MOSFET IXYS Corporation
IXTA3N50P Power MOSFET IXYS Corporation
IXTA3N60P N-Channel MOSFET INCHANGE

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXTA3N100D2HV Power MOSFET
IXTA3N100P MOSFET
IXTA3N120HV High Voltage Power MOSFET
IXTA3N150HV High Voltage Power MOSFET
IXTA3N60P Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Depletion Mode MOSFET IXTA3N100D2 IXTP3N100D2 N-Channel D G S Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C Continuous Transient TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220) TO-263 TO-220 Maximum Ratings 1000 V 20 V 30 V 125 W - 55 ... +150 150 - 55 ... +150 C C C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 2.5 g 3.0 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSX VGS = - 5V, ID = 250A VGS(off) VDS = 25V, ID = 250A IGSX VGS = 20V, VDS = 0V IDSX(off) VDS = VDSX, VGS = - 5V RDS(on) ID(on) VGS = 0V, ID = 1.5A, Note 1 VGS = 0V, VDS = 50V, Note 1 TJ = 125C Characteristic Values Min. Typ. Max. 1000 V - 2.5 - 4.