IXTA3N100D2HV - Power MOSFET

Datasheet Summary

Features

High Blocking Voltage.
Normally ON Mode.
 High Voltage package Advantages.
Easy to Mount.
Space Savings.
High Power Density.

IXYS

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Datasheet Details

Part number	IXTA3N100D2HV
Manufacturer	IXYS
File Size	224.50 KB
Description	Power MOSFET
Datasheet	IXTA3N100D2HV Datasheet
Additional preview pages of the IXTA3N100D2HV datasheet.

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Full PDF Text Transcription

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High Voltage Depletion Mode Power MOSFET IXTA3N100D2HV D VDSX = ID(on) >  RDS(on) 1000V 3A 6 N-Channel G S Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C Continuous Transient Maximum Ratings 1000 V 20 V 30 V TC = 25C 125 W - 55 ... +150 C 150 C - 55 ... +150 C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 °C 260 °C Mounting Force 10..65 / 2.2..14.6 N/lb 2.5 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSX VGS = - 5V, ID = 250A VGS(off) VDS = 25V, ID = 250A IGSX VGS = 20V, VDS = 0V IDSX(off) VDS = VDSX, VGS = - 5V TJ = 125C RDS(on) VGS = 0V, ID = 1.5A, Note 1 ID(on) VGS = 0V, VDS = 50V, Note 1 Characteristic Values Min. Typ. Max.

Published: Feb 25, 2025 |