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IXTA3N100D2HV - Power MOSFET

Key Features

  • High Blocking Voltage.
  • Normally ON Mode.
  •  High Voltage package Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

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📁 Similar Datasheet

Part Number Description Manufacturer
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Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXTA3N100D2 MOSFET
IXTA3N100P MOSFET
IXTA3N120HV High Voltage Power MOSFET
IXTA3N150HV High Voltage Power MOSFET
IXTA3N60P Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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High Voltage Depletion Mode Power MOSFET IXTA3N100D2HV D VDSX = ID(on) >  RDS(on) 1000V 3A 6 N-Channel G S Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C Continuous Transient Maximum Ratings 1000 V 20 V 30 V TC = 25C 125 W - 55 ... +150 C 150 C - 55 ... +150 C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 °C 260 °C Mounting Force 10..65 / 2.2..14.6 N/lb 2.5 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSX VGS = - 5V, ID = 250A VGS(off) VDS = 25V, ID = 250A IGSX VGS = 20V, VDS = 0V IDSX(off) VDS = VDSX, VGS = - 5V TJ = 125C RDS(on) VGS = 0V, ID = 1.5A, Note 1 ID(on) VGS = 0V, VDS = 50V, Note 1 Characteristic Values Min. Typ. Max.