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IXTH16P60P - Power MOSFET

Download the IXTH16P60P datasheet PDF. This datasheet also covers the IXTT16P60P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z z z z TO-247 (IXTH) G D D (TAB) S D = Drain TAB = Drain G = Gate S = Source 1.6mm (0.062 in. ) from case for 10s Plastic body for 10s Mounting torque TO-268 TO-247 (TO-247) 300 260 1.13 / 10 5 6 International standard packages Avalanche Rated Rugged PolarPTM process Low package inductance - easy to drive and to protect.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTT16P60P_IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH16P60P IXTT16P60P RDS(on) VDSS ID25 = = ≤ - 600V - 16A 720mΩ TO-268 (IXTT) G S D (TAB) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings - 600 - 600 ±20 ±30 - 16 - 48 - 16 2.5 10 460 - 55 ... +150 150 - 55 ... +150 V V V V A A A J V/ns W °C °C °C °C °C Nm/lb.in. g g Features: z z z z TO-247 (IXTH) G D D (TAB) S D = Drain TAB = Drain G = Gate S = Source 1.6mm (0.062 in.