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IXTH20P50P - Power MOSFET

Download the IXTH20P50P datasheet PDF. This datasheet also covers the IXTT20P50P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • International Standard Packages.
  • Avalanche Rated.
  • Rugged PolarPTM Process.
  • Low Package Inductance.
  • Fast Intrinsic Diode Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTT20P50P-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTH200N075T Power MOSFET IXYS Corporation
IXTH200N075T N-Channel MOSFET INCHANGE
IXTH200N085T Power MOSFET IXYS Corporation
IXTH200N10T Power MOSFET IXYS Corporation
IXTH200N10T N-Channel MOSFET INCHANGE

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXTH20N50D High Voltage MOSFET
IXTH20N60 N-Channel MOSFET
IXTH20N65X Power MOSFET
IXTH22N50P Power MOSFET
IXTH240N15X4 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTT20P50P IXTH20P50P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-247) TO-268 TO-247 Maximum Ratings - 500 V - 500 V 20 V 30 V - 20 A - 60 A - 20 A 2.5 J 10 V/ns 460 W - 55 ... +150 C 150 C - 55 ... +150 C 300 260 1.13 / 10 4 6 °C °C Nm/lb.in.