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Preliminary Data Sheet
MegaMOSTMFET
N-Channel Enhancement Mode
VDSS
IXTH 30N45 450 V IXTH 30N50 500 V
ID25
RDS(on)
30 A 0.16 Ω 30 A 0.17 Ω
TO-247 AD
Symbol
VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T
stg
TL Md Weight
Symbol
VDSS
VGS(th)
IGSS IDSS
R DS(on)
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous Transient
30N45 30N50 30N45 30N50
450 500 450 500
±20 ±30
TC = 25°C TC = 25°C, pulse width limited by TJM
TC = 25°C
30 120
360
-55 ... +150 150
-55 ... +150
V V V V
V V
A A
W
°C °C °C
1.6 mm (0.063 in) from case for 10 s Mounting torque
300 °C 1.13/10 Nm/lb.in.
6g
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max.
IXTH30N45 Datasheet
