IXTH30N45 Description
+150 V V V V V V A A W °C °C °C 1.6 mm (0.063 in) from case for 10 s Mounting torque 300 °C 1.13/10 Nm/lb.in. 6g Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
IXTH30N45 Key Features
- International standard package
- Rugged polysilicon gate cell structure
- High mutating dv/dt rating
- Fast switching times