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Trench Gate Power MOSFET
IXTA50N25T IXTQ50N25T IXTP50N25T IXTH50N25T
N-Channel Enhancement Mode
VDSS = ID25 =
RDS(on) ≤
250V 50A 60mΩ
TO-263 AA (IXTA)
TO-220AB (IXTP)
TO-3P (IXTQ)
G S
D (Tab)
GD S
D (Tab)
Symbol
VDSS VDGR V
GSM
ID25 IDM IA EAS PD
TJ TJM Tstg
TL
Md FC Weight
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ
Transient
Maximum Ratings
250
V
250
V
± 30
V
TC = 25°C TC = 25°C, Pulse Width Limited by TJM
50
A
130
A
TC = 25°C TC = 25°C
5
A
1.5
J
TC = 25°C
400
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.6mm (0.062in.) from Case for 10s Plastic Body for 10 s
300
°C
260
°C
Mounting Torque (TO-220, TO-3P &TO-247) 1.13 / 10
Mounting Force (TO-263)
10..65 / 2.2..14.6
Nmlb.in. N/lb.
TO-263 TO-220 TO-3P TO-247
2.5
g
3.
IXTH50N25T Datasheet
