Datasheet Summary
Trench Gate Power MOSFET
IXTA50N25T IXTQ50N25T IXTP50N25T IXTH50N25T
N-Channel Enhancement Mode
VDSS = ID25 =
RDS(on) ≤
250V 50A 60mΩ
TO-263 AA (IXTA)
TO-220AB (IXTP)
TO-3P (IXTQ)
D (Tab)
GD S
D (Tab)
Symbol
VDSS VDGR V
ID25 IDM IA EAS PD
TJ TJM Tstg
Md FC Weight
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ
Transient
Maximum Ratings
± 30
TC = 25°C TC = 25°C, Pulse Width Limited by TJM
TC = 25°C TC = 25°C
TC = 25°C
-55 ... +150
°C
°C
-55 ......