• Part: IXTH6N150
  • Description: Power MOSFET
  • Manufacturer: IXYS
  • Size: 297.31 KB
Download IXTH6N150 Datasheet PDF
IXYS
IXTH6N150
IXTH6N150 is Power MOSFET manufactured by IXYS.
- Part of the IXTT6N150 comparator family.
High Voltage Power MOSFET IXTT6N150 IXTH6N150 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-247) TO-268 TO-247 Maximum Ratings 20 30 500 mJ V/ns - 55 ... +150 C C - 55 ... +150 C 300 260 1.13 / 10 4 6 °C °C Nm/lb.in. g...