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IXTH6N150 - Power MOSFET

Download the IXTH6N150 datasheet PDF. This datasheet also covers the IXTT6N150 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • International Standard Packages.
  • Molding Epoxies Weet UL 94 V-0 Flammability Classification.
  • Fast Intrinsic Diode.
  • Low Package Inductance Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTT6N150-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTH6N120 High Voltage Power MOSFET IXYS Corporation
IXTH6N50D2 N-Channel MOSFET IXYS Corporation
IXTH6N80 N-Channel MOSFET INCHANGE
IXTH6N80A N-Channel MOSFET INCHANGE
IXTH6N90 Standard Power MOSFET IXYS Corporation

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXTH6N100D2 N-Channel MOSFET
IXTH6N80 Power MOSFET
IXTH6N80A Power MOSFET
IXTH60N15 Power MOSFET
IXTH60N20L2 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
High Voltage Power MOSFET IXTT6N150 IXTH6N150 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-247) TO-268 TO-247 Maximum Ratings 1500 V 1500 V 20 V 30 V 6 A 24 A 3 A 500 mJ 5 V/ns 540 W - 55 ... +150 C 150 C - 55 ... +150 C 300 260 1.13 / 10 4 6 °C °C Nm/lb.in.