IXTH6N150 Description
+150 C 300 260 1.13 / 10 4 6 °C °C Nm/lb.in.
IXTH6N150 Key Features
- International Standard Packages
- Molding Epoxies Weet UL 94 V-0
- Fast Intrinsic Diode
- Low Package Inductance
- Easy to Mount
- Space Savings
- High Power Density
IXTH6N150 is Power MOSFET manufactured by IXYS.
| Part Number | Description |
|---|---|
| IXTH6N100D2 | N-Channel MOSFET |
| IXTH6N80 | Power MOSFET |
| IXTH6N80A | Power MOSFET |
| IXTH60N15 | Power MOSFET |
| IXTH60N20L2 | Power MOSFET |
+150 C 300 260 1.13 / 10 4 6 °C °C Nm/lb.in.