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IXTH96P085T - Power MOSFET

This page provides the datasheet information for the IXTH96P085T, a member of the IXTA96P085T Power MOSFET family.

Features

  • z International Standard Packages z Avalanche Rated z Extended FBSOA z Fast Intrinsic Diode z Low RDS(ON) and QG Advantages z Easy to Mount z Space Savings z High Power Density.

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TrenchPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTA96P085T IXTP96P085T IXTH96P085T Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-220 & TO-247) TO-263 TO-220 TO-247 Maximum Ratings - 85 V - 85 V ±15 V ±25 V - 96 A - 300 A - 48 A 1 J 298 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 2.5 g 3.0 g 6.
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