Overview: High Voltage Power MOSFETs w/ Extended FBSOA
N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA IXTK20N150 IXTX20N150 Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS dv/dt
PD
TJ TJM Tstg
TL TSOLD
Md FC
Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force (PLUS247) TO-264 PLUS247 Maximum Ratings 1500 1500 V V ±30 V ±40 V
20 A 50 A 10 A 2.5 J
5 V/ns 1250 W -55 to +150 150
-55 to +150 °C °C °C 300 °C 260 °C 1.13/10 20..120 /4.5..27 Nm/lb.in. N/lb. 10 g 6g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 1mA IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min. Typ. Max. 1500 V 2.5 4.
