Overview: Advance Technical Information High Voltage Power MOSFET w/ Extended FBSOA
N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA IXTK5N250 IXTX5N250 VDSS ID25
RDS(on) = 2500V = 5A < 8.8Ω TO-264 (IXTK) Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
PD
TJ TJM Tstg
TL TSOLD
Md FC
Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force (PLUS247) TO-264 PLUS247 Maximum Ratings 2500 2500 V V ±30 V ±40 V
5A 20 A 2.5 A 2.5 J 960 W -55 to +150 150
-55 to +150
300 260 °C °C °C
°C °C 1.13/10 20..120 /4.5..27 Nm/lb.in. N/lb. 10 g 6g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 1mA IGSS VGS = ±30V, VDS = 0V IDSS VDS = 2kV, VGS = 0V TJ = 125°C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min. Typ. Max. 2500 V 2.0 5.0 V ±200 nA 50 μA 4 mA 8.
