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High Voltage MOSFET
N-Channel Enhancement Mode Avalanche Energy Rated Preliminary Data
IXTA 1N80 IXTP 1N80 IXTY 1N80
VDSS ID25
RDS(on)
= 800 V = 750 mA = 11 Ω
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM
Maximum Ratings 800 800 ± 20 ± 30 750 3 1.0 V V V V mA A A mJ mJ V/ns W °C °C °C
TO-220AB (IXTP)
GD S
D (TAB)
TO-263 AA (IXTA)
TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 47 Ω TC = 25°C
5 100 3 40 -55 ... +150 150 -55 ... +150
G S D (TAB)
TO-252 AA (IXTY)
G S
D (TAB)
Mounting torque TO-220 TO-252 TO-263
1.13/10 Nm/lb.in. 4 0.
IXTP1N80 Datasheet
