IXTP3N100D2 - MOSFET

This page provides the datasheet information for the IXTP3N100D2, a member of the IXTA3N100D2 MOSFET family.

Datasheet Summary

Features

Normally ON Mode.
 International Standard Packages.
Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages.
Easy to Mount.
Space Savings.
High Power Density.

IXYS

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Datasheet Details

Part number	IXTP3N100D2
Manufacturer	IXYS
File Size	156.03 KB
Description	MOSFET
Datasheet	IXTP3N100D2 Datasheet
Additional preview pages of the IXTP3N100D2 datasheet.

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Full PDF Text Transcription

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Depletion Mode MOSFET IXTA3N100D2 IXTP3N100D2 N-Channel D G S Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C Continuous Transient TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220) TO-263 TO-220 Maximum Ratings 1000 V 20 V 30 V 125 W - 55 ... +150 150 - 55 ... +150 C C C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 2.5 g 3.0 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSX VGS = - 5V, ID = 250A VGS(off) VDS = 25V, ID = 250A IGSX VGS = 20V, VDS = 0V IDSX(off) VDS = VDSX, VGS = - 5V RDS(on) ID(on) VGS = 0V, ID = 1.5A, Note 1 VGS = 0V, VDS = 50V, Note 1 TJ = 125C Characteristic Values Min. Typ. Max. 1000 V - 2.5 - 4.

Published: Dec 31, 2016 |