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Preliminary Technical Information
TrenchPTM Power MOSFET
P-Channel Enhancement Mode Avalanche Rated
IXTA32P20T IXTP32P20T IXTQ32P20T IXTH32P20T
TO-263 AA (IXTA)
TO-220AB (IXTP)
VDSS = ID25 = ≤RDS(on)
- 200V - 32A
130mΩ
TO-3P (IXTQ)
G S
D (Tab)
GD S
D (Tab)
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
PD
TJ TJM Tstg
TL TSOLD FC Md Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ
Continuous Transient
- 200 - 200
+ 15 + 25
V V
V V
TC = 25°C TC = 25°C, Pulse Width Limited by TJM
TC = 25°C TC = 25°C
TC = 25°C
- 32 - 96
- 32 1
300
-55 ... +150 150
-55 ... +150
A A
A J
W
°C °C °C
1.6mm (0.062 in.) from Case for 10s Plastic body for 10s
300 °C 260 °C
Mounting Force (TO-263)
10..65 / 2.2..14.6
Mounting Torque (TO-220, TO-247 & TO-3P) 1.
IXTQ32P20T Datasheet
