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IXTT6N150 - Power MOSFET

Features

  • International Standard Packages.
  • Molding Epoxies Weet UL 94 V-0 Flammability Classification.
  • Fast Intrinsic Diode.
  • Low Package Inductance Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

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Full PDF Text Transcription

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High Voltage Power MOSFET IXTT6N150 IXTH6N150 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-247) TO-268 TO-247 Maximum Ratings 1500 V 1500 V 20 V 30 V 6 A 24 A 3 A 500 mJ 5 V/ns 540 W - 55 ... +150 C 150 C - 55 ... +150 C 300 260 1.13 / 10 4 6 °C °C Nm/lb.in.
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