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IXTT02N450HV - High Voltage Power MOSFET

Key Features

  • High Blocking Voltage.
  • High Voltage Packages Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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High Voltage Power MOSFET IXTT02N450HV IXTH02N450HV VDSS I D25 RDS(on) = 4500V = 200mA  625 N-Channel Enhancement Mode Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque TO-268HV TO-247HV Maximum Ratings 4500 V 4500 V 20 V 30 V 200 mA 600 mA 113 W - 55 ... +150 C 150 C - 55 ... +150 C 300 °C 260 °C 1.13/10 Nm/lb.in 4 g 6 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VGS(th) VDS = VGS, ID = 250A IGSS VGS = 20V, VDS = 0V IDSS VDS = 3.6kV, VGS = 0V VDS = 4.5kV VDS = 3.