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IXTT76P10THV Datasheet Power MOSFET

Manufacturer: IXYS (now Littelfuse)

Download the IXTT76P10THV datasheet PDF. This datasheet also includes the IXTP76P10T variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IXTP76P10T_IXYS.pdf) that lists specifications for multiple related part numbers.

Overview

TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTT76P10THV IXTA76P10T IXTP76P10T IXTH76P10T D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220 & TO-247) TO-263 TO-220 TO-268HV TO-247 Maximum Ratings - 100 V - 100 V 15 V 25 V - 76 A - 230 A - 38 A 1 J 298 W -55 ...

+150 C 150 C -55 ...

+150 C 300 °C 260 °C 1.13 /10 Nm/lb.in.

Key Features

  • International Standard Packages.
  • Avalanche Rated.
  • Extended FBSOA.
  • Fast Intrinsic Diode.
  • Low RDS(ON) and QG Advantages.
  • Easy to Mount.
  • Space Savings.

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