IXYH20N120C3D1 Description
+150 °C 300 °C 260 °C 1.13/10 Nm/lb.in.
IXYH20N120C3D1 Key Features
- Optimized for Low Switching Losses
- Square RBSOA
- Anti-Parallel Ultra Fast Diode
- Avalanche Rated
- International Standard Package
- High Power Density
- Low Gate Drive Requirement