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IXYH24N170CV1 - High Voltage IGBT

Key Features

  • High Voltage Package.
  • High Blocking Voltage.
  • Low Saturation Voltage Advantages.
  • Low Gate Drive Requirement.
  • High Power Density Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 24A, VGE = 15V, Note 1 TJ = 150C Characteristic Values Min. Typ. Max. 1700 V 3.0 5.0 V 25 A 5 mA 100 nA 3.5 4.0.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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High Voltage XPTTM IGBT w/ Diode Preliminary Technical Information IXYH24N170CV1 VCES = 1700V IC110 = 24A V CE(sat)  4.0V tfi(typ) = 78ns Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 110°C TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 5 Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque Maximum Ratings 1700 V 1700 V ±20 V ±30 V 58 A 24 A 28 A 140 A ICM = 96 A 1360 V 500 W -55 ... +175 °C 175 °C -55 ... +175 °C 300 °C 260 °C 1.13/10 Nm/lb.in.