IXYH30N65B3D1 Datasheet | IXYS

Features - Optimized for Low 5-30k Hz Switching - Square RBSOA - Anti-Parallel Fast Diode - Avalanche Rated - Short Circuit Capability Advantages - High Power Density - Extremely Rugged - Low Gate Drive Requirement Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) = 30A, = 15V, Note 1 TJ = 150C Characteristic Values Min. Typ. Max. 650 V 3.5 6.0 V 10 A 1.5 m A 100 n A 1.8 2.1 V 2.2 V Applications - Power Inverters - UPS - Motor...