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IXYH30N120A4 - Ultra Low-Vsat PT IGBT

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IXYS

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IXYH30N120A4 Ultra Low-Vsat PT IGBT by IXYS - Datasheet Preview — Datasheet preview – IXYH30N120A4

Datasheet Details

Part number	IXYH30N120A4
Manufacturer	IXYS
File Size	396.57 KB
Description	Ultra Low-Vsat PT IGBT
Datasheet	IXYH30N120A4 Datasheet
Note	This datasheet PDF includes multiple part numbers: IXYH30N120A4, IXYA30N120A4HV. Please refer to the document for exact specifications by model.
Additional preview pages of the IXYH30N120A4 datasheet.

Product details

Features

Optimized for Low Conduction.
Positive Thermal Coefficient of Vce(sat).
International Standard Packages Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 25A, VGE = 15V, Note 1 TJ = 150C Characteristic Values Min. Typ. Max. 1200 V 4.0 6.5 V 10 A 500 A 100 nA 1.6 1.9 V 1.9 V.

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Published: Feb 9, 2025 |