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IXYH30N120C4H1 - Gen4 IGBT

General Description

: Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art Trench IGBT process, these devices

Overview

IXYH30N120C4H1 1200 V, 30 A XPTTM Gen4 IGBT with Sonic Diode Extreme Light Punch Through IGBT for 20–50 kHz Switching IGBT Datasheet Pinout Diagram (TO-247-3L) Tab C G E GC E G: Gate; C: Collector; E: Emitter; Tab:.

Key Features

  • & Benefits:.
  • Optimized for 20.
  • 50 kHz Switching.
  • High Surge Current Capability.
  • Square RBSOA.
  • International Standard Package.
  • Anti-Parallel Sonic Diode.