IXYH30N120C4H1
IXYH30N120C4H1 is Gen4 IGBT manufactured by IXYS.
Description
:
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities.
Features
& Benefits:
- Optimized for 20
- 50 k Hz Switching
- High Surge Current Capability
- Square RBSOA
- International Standard Package
- Anti-Parallel Sonic Diode
Applications:
- Power Inverters
- UPS
- Motor Drives
- SMPS
- PFC Circuits
- Battery Chargers
- Welding Machines
Product Summary
Characteristic VCES IC110 VCE(sat) tfi(typ)
Value 1200
30 2.0 53
Unit V A V ns
© 2023 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: XZ 10/12/2023
Maximum Ratings
Symbol VCES VGES VGEM I C25 IC110 I F110 I CM
SSOA (RBSOA)
PC TVJ Tstg TL Md W
Characteristic Collector-Emitter Voltage
Gate
- Emitter Voltage Transient Gate
- Emitter Voltage Continuous Collector Current Continuous Collector Current
Diode Forward Current Pulsed Collector Current
Switching Safe Operating Area (Reverse Biased Safe Operating Area)
Collector Power Dissipation Virtual Junction Temperature
Storage Temperature Lead Temperature for...
