IXYH30N120C4H1 Description
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art Trench IGBT process, these devices.
IXYH30N120C4H1 Key Features
- Optimized for 20 -50 kHz Switching
- High Surge Current Capability
- Square RBSOA
- International Standard Package
- Anti-Parallel Sonic Diode