IXYH30N120C4
IXYH30N120C4 is High-Speed Low-Vsat PT IGBT manufactured by IXYS.
Features
- Optimized for Low Switching Losses
- Positive Thermal Coefficient of Vce(sat)
- International Standard Package
Advantages
- High Power Density
- Low Gate Drive Requirement
Applications
- Power Inverters
- UPS
- Motor Drives
- SMPS
- PFC Circuits
- Battery Chargers
- Welding Machines
- Lamp Ballasts
© 2018 IXYS CORPORATION, All Rights Reserved
DS100930A(8/18)
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified) gfs
IC = 25A, VCE = 10V, Note 1
Cies Coes Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on) Qge Qgc
IC = 25A, VGE = 15V, VCE = 0.5
- VCES td(on) tri Eon td(off) tfi Eoff
Inductive load, TJ = 25°C IC = 25A, VGE = 15V VCE = 0.8
- VCES, RG = 5
Note 2 td(on) tri Eon td(off) tfi Eoff
Inductive load, TJ = 125°C IC = 25A, VGE = 15V VCE = 0.8
- VCES, RG = 5
Note 2
Rth JC Rth CS
Characteristic Values
Min.
Typ. Max.
1150 p F
70 p F
40 p...
