IXYH30N120B4 - High-Speed Low-Vsat PT IGBT

Features

Optimized for Low Conduction Switching Losses.
Positive Thermal Coefficient of Vce(sat).
International Standard Package Advantages.
High Power Density.
Low Gate Drive Requirement.

IXYH30N120B4 High-Speed Low-Vsat PT IGBT by IXYS - Datasheet Preview — Datasheet preview – IXYH30N120B4

Datasheet Details

Part number	IXYH30N120B4
Manufacturer	IXYS (now Littelfuse)
File Size	260.52 KB
Description	High-Speed Low-Vsat PT IGBT
Datasheet	IXYH30N120B4 Datasheet
Additional preview pages of the IXYH30N120B4 datasheet.

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Full PDF Text Transcription

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Advance Technical Information 1200V XPTTM GenX4TM IGBT IXYH30N120B4 High-Speed Low-Vsat PT IGBT for up to 5-30kHz Switching VCES = 1200V IC110 = 30A V CE(sat)  2.1V tfi(typ) = 108ns TO-247 Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 1200 V 1200 V ±20 V ±30 V TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 5 Clamped Inductive Load TC = 25°C 100 A 30 A 174 A ICM = 60 A  VCE 0.8 • VCES 500 W -55 ... +175 °C 175 °C -55 ... +175 °C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 °C 260 °C Mounting Torque 1.13/10 Nm/lb.in.

Published: Feb 16, 2025 |