IXYH30N120C3D1
IXYH30N120C3D1 is IGBT manufactured by IXYS.
Features
- Optimized for Low Switching Losses
- Square RBSOA
- Positive Thermal Coefficient of
Vce(sat)
- Anti-Parallel Ultra Fast Diode
- Avalanche Rated
- High Current Handling Capability
- International Standard Package
Advantages
- High Power Density
- Low Gate Drive Requirement
Applications
- High Frequency Power Inverters
- UPS
- Motor Drives
- SMPS
- PFC Circuits
- Battery Chargers
- Welding Machines
- Lamp Ballasts
© 2021 Littelfuse, Inc.
DS100386E(01/21)
Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs
IC = 30A, VCE = 10V, Note 1
Cies Coes Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on) Qge Qgc
IC = 30A, VGE = 15V, VCE = 0.5
- VCES td(on) tri Eon td(off) tfi Eoff
Inductive load, TJ = 25°C IC = 30A, VGE = 15V VCE = 0.5
- VCES, RG = 10
Note 2 td(on) tri Eon td(off) tfi Eoff
Inductive load, T = 150°C J
IC = 30A, VGE = 15V
V = 0.5
- V , R = 10
CES G
Note...
