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IXYH30N120C3D1 Datasheet IGBT

Manufacturer: IXYS (now Littelfuse)

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Overview

1200V XPTTM IGBT GenX3TM w/ Diode IXYH30N120C3D1 High-Speed IGBT for 20-50 kHz Switching Symbol VCES V CGR VGES VGEM IC25 IC110 IF110 I CM IA EAS SSOA (RBSOA) PC TJ TJM T stg TL Md Weight Test Conditions TJ = 25°C to 150°C T J = 25°C to 150°C, R GE = 1M Continuous Transient TC = 25°C TC = 110°C TC = 110°C T = 25°C, 1ms C TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s Mounting Torque Maximum Ratings 1200 V 1200 V ±20 V ±30 V 66 A 30 A 20 A 133 A 20 A 400 mJ ICM = 60 A  @VCE VCES 416 W -55 ...

+150 °C 150 °C -55 ...

+150 °C 300 °C 1.13/10 6 Nm/lb.in g Symbol Test Conditions (T J = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V V GE(th) I C = 250A, V CE = V GE I V = V , V = 0V CES CE CES GE T J = 125C IGES VCE = 0V, VGE = 20V V CE(sat) I = 30A, V = 15V, Note 1 C GE T J = 150C Characteristic Values Min.

Key Features

  • Optimized for Low Switching Losses.
  • Square RBSOA.
  • Positive Thermal Coefficient of Vce(sat).
  • Anti-Parallel Ultra Fast Diode.
  • Avalanche Rated.
  • High Current Handling Capability.
  • International Standard Package Advantages.
  • High Power Density.
  • Low Gate Drive Requirement.

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