IXYH30N120C3D1 Description
1200V XPTTM IGBT GenX3TM w/ Diode IXYH30N120C3D1 High-Speed IGBT for 20-50 kHz Switching Symbol VCES V CGR VGES VGEM IC25 IC110 IF110 I CM IA EAS SSOA (RBSOA) PC TJ TJM T stg TL Md Weight Test Conditions TJ = 25°C to 150°C T J = 25°C to 150°C, R GE = 1M.
IXYH30N120C3D1 Key Features
- Optimized for Low Switching Losses
- Square RBSOA
- Anti-Parallel Ultra Fast Diode
- Avalanche Rated
- High Current Handling Capability
- International Standard Package
- High Power Density
- Low Gate Drive Requirement