IXYS SS150TA60110
Silicon Carbide Schottky Diode
| Part No. | SS150TA60110 |
|---|---|
| Datasheet | SS150TA60110 Download |
| Manufacturer |  IXYS |
| Description | Silicon Carbide Schottky Diode |
| Buy | Stock & Price |
MAXIMUM RATINGS
600 600 600 10 25 -55 to +175 -55 to +175 60 V V V A AFEATURES
Repetitive Peak Forward Surge Current TVJ = 45°C, tP = 10 ms Half Sine Wave D = 0.3 Operating Virtual Junction Temperature Storage Temperature TC = 25 °C (20 W/device)●
●
●
●
●
●
●
●
●
●
● 600 V SiC Schottky Diode Surface Mount Package Zero Reverse Recovery Zero Forward Recovery High Frequency Operation Temperature Independent Behavior Positive Temperature Coefficient for VF
APPLICATIONS
°C °C W MHz Switch Mode Power Supplies High Frequency Converters Resonant Converters Rectifier Circuits Parameter Test Conditions Characteristic Values Typ. Max. 1.8 2.4 50 200 TJ = 25°C unless otherwise specified Units V VF IR CJ Forward Voltage IF = 5 A, TJ = 25°C TJ = 175°C VR = 600 V, TJ = 25°C TJ = 175°C f = 1 MHz, VR = 0 V VR = 200 V VR = 600 V 1.6 2 10 20 485 85 80 2.5 Reverse Current µA Junction Capacitance pF RTHJC TL Isolation Weight Thermal Resistance Lead Soldering Temperature Pin to Substrate Pin to Pin 1.6 mm (0.063 in) from case for 10 s °C/W °C VRMS g 300 >1800 >1500 2 Free Datasheet SS150TA60110, SS150TC60110, SS150TI60110 Fig.
