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SS150TA60110 - Silicon Carbide Schottky Diode

Features

  • Repetitive Peak Forward Surge Current TVJ = 45°C, tP = 10 ms Half Sine Wave D = 0.3 Operating Virtual Junction Temperature Storage Temperature TC = 25 °C (20 W/device).
  • 600 V SiC Schottky Diode Surface Mount Package Zero Reverse Recovery Zero Forward Recovery High Frequency Operation Temperature Independent Behavior Positive Temperature Coefficient for VF.

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Datasheet preview – SS150TA60110

Datasheet Details

Part number SS150TA60110
Manufacturer IXYS (now Littelfuse)
File Size 187.56 KB
Description Silicon Carbide Schottky Diode
Datasheet download datasheet SS150TA60110 Datasheet
Additional preview pages of the SS150TA60110 datasheet.

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Full PDF Text Transcription

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SS150TA60110, SS150TC60110, SS150TI60110 Silicon Carbide Schottky Diode Part Number SS150TA60110 SS150TC60110 SS150TI60110 VRRM (V) 600 600 600 IF(AVG) (A) 10 10 10 Configuration Triple Common Anode Triple Common Cathode Triple Independent Triple Independent (TI) VRRM = 600 V IF(AVG) = CJ 10 A = 80 pF Triple Anode (TA) Triple Cathode (TC) A = Anode C = Cathode Symbol Parameter VRRM VRSM VDC IF(AVG) IFRM TVJ TSTG PTOT Symbol Repetitive Peak Reverse Voltage Repetitive Surge Reverse Voltage DC Blocking Voltage Average Forward Current TJ = 175°C Test Conditions Maximum Ratings 600 600 600 10 25 -55 to +175 -55 to +175 60 V V V A A Features Repetitive Peak Forward Surge Current TVJ = 45°C, tP = 10 ms Half Sine Wave D = 0.
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