IXYS VDI75-06P1
IGBT Modules
| Part No. | VDI75-06P1 |
|---|---|
| Datasheet | VDI75-06P1 Download |
| Manufacturer |  IXYS |
| Description | IGBT Modules |
| Buy | Stock & Price |
MAXIMUM RATINGS
TVJ = 25°C to 150°C 600 V ± 20 V TC = 25°C TC = 80°C VGE = ±15 V; R G = 22 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH VCE = VCES; VGE = ±15 V; RG = 22 Ω; TVJ = 125°C non-repetitive 69 48 100 VCES 10 A A A µs TC = 25°C 208 W Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE(sat) IC = 75 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C 2.3 2.8 VGE(th) IC = 1 mA; VGE = VCE 4.5 ICES VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C IGES VCE = 0 V; VGE = ± 20 V t d(on) tr td(off) tf Eon Eoff Inductive load, TVJ = 125°C VCE = 300 V; IC = 40 A V GE = 15/0 V; R G = 22 Ω 50 55 300 30 1.8 1.4 Cies VCE = 25 V; VGE = 0 V; f = 1 MHz 2.8 RthJC R thJH (per IGBT) with heatsink compound (0.42 K/m.K; 50 µm) 1.2 IXYS reserves the right to change limits, test conditions and dimensions. 2.8 V V 6.5 V 0.8 mA 4.4 mA 100 nA ns ns ns ns mJ mJ nF 0.6 K/W K/W © 2004 IXYS All rights reservedFEATURES
● NPT IGBT's - positive temperature coefficient o...
