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ICE4N70 - N-Channel Enhancement Mode MOSFET

Features

  • Low rDS(on).
  • Ultra Low Gate Charge.
  • High dv/dt capability.
  • High Unclamped Inductive Switching (UIS) capability.
  • High peak current capability.
  • Increased transconductance performance.
  • Optimized design for high performance power systems.

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Datasheet preview – ICE4N70

Datasheet Details

Part number ICE4N70
Manufacturer Icemos
File Size 707.97 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet ICE4N70 Datasheet
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Full PDF Text Transcription

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Preliminary Data Sheet ICE4N70 ICE4N70 N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Increased transconductance performance • Optimized design for high performance power systems HALOGEN Product Summary ID V(BR)DSS rDS(on) FREE TA=25oC ID=250uA VGS=10V VDS=480V D 4A 700V 1.0Ω 21nC Max Min Typ Typ Qg G S T0220 ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE. Standard Metal Heatsink 1=Gate, 2=Drain, 3=Source.
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