ICE60N130 Description
Preliminary Data Sheet ICE60N130 ICE60N130 N-Channel Enhancement Mode MOSFET.
ICE60N130 Key Features
- Low rDS(on)
- Ultra Low Gate Charge
- High dv/dt capability
- High Unclamped Inductive Switching (UIS) capability
- High peak current capability
- Optimized design for hard switching SMPS topologies
- Specifications subject to change
- 2650 943 8 80 23 10 5 67 4.5