• Part: ICE60N130
  • Manufacturer: Micross
  • Size: 718.30 KB
Download ICE60N130 Datasheet PDF
ICE60N130 page 2
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ICE60N130 Description

TO-220 G Max Min Typ Typ D S Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt Ruggedness VGS Ptot Tj, Tstg Gate Source.

ICE60N130 Key Features

  • 55 to +150 60
  • 0.13 0.15
  • RGS Gate Resistance
  • 943 -8- 80
  • 10 -5- 67
  • pF VGS = 0V, VDS = 25V, f = 1 MHz
  • nC VDS = 480V, ID = 23A, VGS = 0 to 10V
  • 1.0 1.2
  • 423 -8- 34
  • V VGS = 0V, IS = IF ns