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ICE60N130FP - N-Channel Enhancement Mode MOSFET

Features

  • Low rDS(on).
  • Ultra Low Gate Charge.
  • High dv/dt capability.
  • High Unclamped Inductive Switching (UIS) capability.
  • High peak current capability.
  • Optimized design for hard switching SMPS topologies.

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Datasheet Details

Part number ICE60N130FP
Manufacturer Icemos
File Size 724.73 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet ICE60N130FP Datasheet
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Preliminary Data Sheet ICE60N130FP ICE60N130FP N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Optimized design for hard switching SMPS topologies HALOGEN Product Summary ID rDS(on) FREE TA=25oC 23A Max Min Typ Typ BVDSS @Tjmax ID=250uA 650V VGS=10V 0.13Ω VDS=480V 82nC D Qg G S ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
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