ICE60N130FP Datasheet PDF (N-Channel MOSFET) | Download Micross Components ICE60N130FP

ICE60N130FP - N-Channel MOSFET

Description

TO-220 G Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt Ruggedness VGS Ptot Tj, Tstg Gate Sourc

Features

r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Product Summary ID V(BR)DSS rDS(ON) Qg TA = 25°C ID = 250uA VGS = 10V VDS = 480V 23A 650V 0.13Ω 82nC Pin.

Datasheet Details

Part number	ICE60N130FP
Manufacturer	Micross Components
File Size	718.83 KB
Description	N-Channel MOSFET
Datasheet	ICE60N130FP Datasheet
Additional preview pages of the ICE60N130FP datasheet.

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Full PDF Text Transcription

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ICE60N130FP N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Product Summary ID V(BR)DSS rDS(ON) Qg TA = 25°C ID = 250uA VGS = 10V VDS = 480V 23A 650V 0.

Published: Sep 24, 2016 |