25N18 - N-Channel MOSFET

Inchange Semiconductor

Key Features

Drain Current ID= 25A@ TC=25℃.
Drain Source Voltage : VDSS= 180V(Min).
Static Drain-Source On-Resistance : RDS(on) = 0.15Ω(Max).
Fast Switching.

25N18 n-channel mosfet by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	25N18
Manufacturer	Inchange Semiconductor
File Size	43.94 KB
Description	N-Channel MOSFET
Datasheet	25N18 Datasheet

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Full PDF Text Transcription (Reference)

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 25A@ TC=25℃ ·Drain Source Voltage : VDSS= 180V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.15Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching regulators ·Switching converters, motor drivers, relay drivers isc Product Specification 25N18 ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 180 ±20 V V ID Drain Current-Continuous 25 A IDM Drain Current-Single Plused 60 A PD Total Dissipation @TC=25℃ 150 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.83 ℃/W isc website：www.