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2N20 - N-Channel MOSFET Transistor

Key Features

  • Drain Current ID= 2A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 200V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 3.5Ω(Max).
  • Fast Switching.

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N20 ·FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.5Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching power supplies,converters,AC and DC motor controls ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 200 ±30 V V ID Drain Current-Continuous 2A IDM Drain Current-Single Plused 9A PD Total Dissipation @TC=25℃ 25 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.