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2N4576 - Silicon NPN Power Transistor

General Description

Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage The device employs the popular JEDEC TO-3 100% avalanche tested

and reliable operation.

High voltage high current power trans

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·The device employs the popular JEDEC TO-3 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·High voltage high current power transistors ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC PC TJ Tstg Collector-Base Voltage 100 V Collector-Emitter Voltage 80 V Emitter-Base Voltage 8 V Collector Current-Continuous 10 A Collector Power Dissipation@TC=25℃ 150 W Junction Temperature 200 ℃ Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.17 ℃/W 2N4576 isc website：www.