2N80 - N-Channel MOSFET Transistor

Datasheet Summary

Features

Drain Current ID= 2.4A@ TC=25℃.
Drain Source Voltage- : VDSS= 800V(Min).
Static Drain-Source On-Resistance : RDS(on) = 7.0Ω(Max).
Fast Switching.

Inchange Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	2N80
Manufacturer	Inchange Semiconductor
File Size	62.16 KB
Description	N-Channel MOSFET Transistor
Datasheet	2N80 Datasheet
Additional preview pages of the 2N80 datasheet.

📁 Similar Datasheet

2N80 - 800V N-CHANNEL POWER MOSFET (Unisonic Technologies)
2N80-C - 800V NHANNEL POWER MOSFET (UTC)
2N80K5 - N-channel Power MOSFET (STMicroelectronics)
2N80Z - 800V N-CHANNEL POWER MOSFET (Unisonic Technologies)
2N827 - PNP germanium mesa transistor (Motorola)
2N828 - PNP germanium epitaxial mesa transistor (Motorola)
2N828A - PNP germanium epitaxial mesa transistors (Motorola)
2N829 - PNP germanium epitaxial mesa transistors (Motorola)
2N834 - NPN HIGH SPEED SATURATED LOGIC SWITCHES (New Jersey Semi-Conductor)
2N834 - NPN silicon epitaxial transistors (Motorola)

Other Datasheets by Inchange Semiconductor

2N85 - N-Channel MOSFET Transistor

Full PDF Text Transcription

Click to expand full text

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N80 ·FEATURES ·Drain Current ID= 2.4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7.0Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching power supplies,converters,AC and DC motor controls ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 800 ±30 V V ID Drain Current-Continuous 2.4 A IDM Drain Current-Single Plused 9.6 A PD Total Dissipation @TC=25℃ 90 W Tj Max.

Published: Jun 26, 2016 |