2N80 Datasheet | Specifications & PDF Download

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N80 ·FEATURES ·Drain Current ID= 2.4A@ TC=25℃ ·Drain Source Voltag

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FQP2N80 — N-Channel QFET® MOSFET November 2013 FQP2N80 N-Channel QFET® MOSFET 800 V, 2.4 A, 6.3 Ω Description This N-Channel enhancement mode power

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PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFH12N80P IXFQ12N80P IXFV12N80P IXFV12N80PS VDSS = 800 V ID25 = 12 A ≤RDS(on) 0.85 Ω trr

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P2N80-VB P2N80-VB Datasheet Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 850 V

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PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFH12N80P IXFQ12N80P IXFV12N80P IXFV12N80PS VDSS = 800 V ID25 = 12 A ≤RDS(on) 0.85 Ω trr

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Electronic Alliance www.eaa.net.au MZ31 Series for time delay start for lighting MZ31 series of PTC Thermistor are applicable to various types of fluo

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Advance Technical Information PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM (Electrically Isolated Back Surface) IXFC 12N80P VDSS ID25 RDS(on) trr

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PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFH12N80P IXFQ12N80P IXFV12N80P IXFV12N80PS VDSS = 800 V ID25 = 12 A ≤RDS(on) 0.85 Ω trr

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Advanced Technical Information High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTA 2N80 IXTP 2N80 VDSS ID25 RDS(on) = 800 V

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PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFH12N80P IXFQ12N80P IXFV12N80P IXFV12N80PS VDSS = 800 V ID25 = 12 A ≤RDS(on) 0.85 Ω trr

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MCU02N80 Features • Lower Capacitance • Lower Total Gate Charge • Lower RDS(on) • Tighter VSD Specifications • Avalanche Energy Specified • Epoxy Mee

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UNISONIC TECHNOLOGIES CO., LTD 12N80 12A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using

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PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK 32N80P IXFX 32N80P VDSS ID25 RDS(on) trr = 800

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Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFK32N80Q3 IXFX32N80Q3 D G S Symbol VDSS VDGR

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PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN32N80P VDSS ID25 RDS(on) trr = 800 V = 25 A ≤ 2

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PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK 32N80P IXFX 32N80P VDSS ID25 RDS(on) trr = 800

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PolarTM Power MOSFET IXTU2N80P IXTY2N80P IXTA2N80P VDSS = ID25 =  RDS(on) 800V 2A 6 N-Channel Enhancement Mode IXTP2N80P TO-251 (IXTU) Avalan

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www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Cha

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isc N-Channel MOSFET Transistor IXTP2N80P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6Ω@VGS=10V ·Fully characterized avalanche voltage

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UNISONIC TECHNOLOGIES CO., LTD 2N80 2.4A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N80 is an N-channel mode power MOSFET using UTC’s advance

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