Datasheet Details
| Part number | 2SA1021 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 199.95 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1021_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SA1021 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 199.95 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1021_InchangeSemiconductor.pdf |
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·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V (Min) ·Complement to Type 2SC2481 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV vertical deflection output applications.
·Color TV class B sound output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -1.5 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -1.0 A 1.2 W 20 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1021 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1021 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA;
Compare 2SA1021 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA1021 | Silicon PNP Transistor | Toshiba |
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2SA1021 | Silicon POwer Transistors | SavantIC |
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