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2SA1021 - POWER TRANSISTOR

General Description

High Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V (Min) Complement to Type 2SC2481 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Color TV vertical deflection output applications.

Color TV class B sound output applicat

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isc Silicon PNP Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V (Min) ·Complement to Type 2SC2481 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV vertical deflection output applications. ·Color TV class B sound output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -1.5 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -1.0 A 1.2 W 20 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1021 isc website：www.iscsemi.