Datasheet Summary
isc Silicon PNP Power Transistor
DESCRIPTION
- High Current Capability
- Good Linearity of hFE
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min.)
- plement to Type 2SC2430
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for power switching , high frequency power amplifer, switching regulator and DC/DC...