Datasheet Details
| Part number | 2SA1040 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.83 KB |
| Description | Silicon PNP Power Transistors |
| Datasheet | 2SA1040-InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA1040.
| Part number | 2SA1040 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.83 KB |
| Description | Silicon PNP Power Transistors |
| Datasheet | 2SA1040-InchangeSemiconductor.pdf |
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·High Current Capability ·Good Linearity of hFE ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) ·Complement to Type 2SC2430 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching , high frequency power amplifer, switching regulator and DC/DC converters.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -10 A 100 W 175 ℃ Tstg Storage Temperature -55~175 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1040 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA;
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