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2SA1040 - Silicon PNP Power Transistors

General Description

High Current Capability Good Linearity of hFE Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) Complement to Type 2SC2430 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching , high freq

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isc Silicon PNP Power Transistor 2SA1040 DESCRIPTION ·High Current Capability ·Good Linearity of hFE ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) ·Complement to Type 2SC2430 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching , high frequency power amplifer, switching regulator and DC/DC converters. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -10 A 100 W 175 ℃ Tstg Storage Temperature -55~175 ℃ isc website：www.iscsemi.