Datasheet Details
| Part number | 2SA1051 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.07 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1051_InchangeSemiconductor.pdf |
|
|
Overview: isc Silicon PNP Power Transistor 2SA1051.
| Part number | 2SA1051 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.07 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1051_InchangeSemiconductor.pdf |
|
|
|
·High Current Capability ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifer and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -15 A 150 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA;
| Part Number | Description |
|---|---|
| 2SA1050 | POWER TRANSISTOR |
| 2SA1001 | Silicon PNP Power Transistor |
| 2SA1003 | Silicon PNP Power Transistor |
| 2SA1007 | Silicon PNP Power Transistor |
| 2SA1008 | POWER TRANSISTOR |
| 2SA1009 | Silicon PNP Power Transistor |
| 2SA1011 | POWER TRANSISTOR |
| 2SA1015 | Silicon PNP Power Transistors |
| 2SA1021 | POWER TRANSISTOR |
| 2SA1028 | Silicon PNP Power Transistor |